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Internal photoemission (IPE) studies were performed on molecular diodes in which the alkanedithiol {[}HS(CH2)(n)SH, n = 8, 10] molecular layer is sandwiched between An and GaAs electrodes.

Changes in the Ni(100) surface due to controlled coverages of K are studied through the photoemission spectra of rare gas adsorbates.

Measuring the anisotropy of the field-effect mobility provides insight into the correlation between molecular packing and charge transport in organic semiconductor materials.

While the structure of many surfaces (i.e., solid/vacuum interfaces) is now well established, the structure of solid/solid interfaces is still under investigation, and in many cases still controver

For technological and scientific reason, semiconductor physics has been characterized by a continuing drive towards the fabrication and understanding of ever smaller systems.

For technological and scientific reason, semiconductor physics has been characterised by a continuing drive towards the fabrication and understanding of ever smaller systems.

For technological and scientific reason, semiconductor physics has been characterized by a continuing drive towards the fabrication and understanding of ever smaller systems.

We discuss the fabrication of a FLASH EEPROM floating gate memory device with a cell size of 0.0896 mu m.

The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering.

A new solar neutrino detector, BOREX, based on the nuclide sup (11) B promises the tools for a definitive exploration of the nature of the neutrino and the structure of the sun.

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