Publications

We analyze the structure of a periodic arrangement of optically thick metallic gratings that have very narrow slits.

1.1 General In using an X control chart to maintain control of a process average, we periodically measure n units of the product and plot the average measurement X,, on the control chart in its chr

For coverages less than 1 monolayer, Au grows epitaxially on W(100), above that coverage it forms randomly oriented Au clusters.

When selecting a phosphor for cathode-ray tube applications, it is important to consider the efficiency, decay time, aging characteristics, spectral distribution, and temperature dependence of the

Certain smectic liquid-crystalline mesophases of chiral materials have been shown to exhibit both ferroelectric and pyroelectric properties.

Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garnet, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface.

In this paper high-resolution electron microscopy investigations and molecular dynamics simulations of GeSi nanocrystals buried in 4H-SiC are performed, showing that the experimentally observed sha

We present the materials growth and properties of both epitaxial and amorph ous films of Gd sub 2 O sub 3 (epsilon =14) and Y sub 2 O sub 3 (epsilon = 18) as the alternative gate dielectrics for Si

We present the materials growth and properties of both epitaxial and amorphous films of Gd sub 2 O sub 3 (epsilon=14) and Y sub 2 O sub 3 (epsilon=18) as the alternative gate dielectrics for Si.

The recent discovery of high T sub c superconductor materials such as Ba sub 2 YCu sub 3 O sub (9-x) stimulated worldwide interest in the subject.