We present the materials growth and properties of both epitaxial and amorphous films of Gd sub 2 O sub 3 (epsilon=14) and Y sub 2 O sub 3 (epsilon=18) as the alternative gate dielectrics for Si.
The recent discovery of high T sub c superconductor materials such as Ba sub 2 YCu sub 3 O sub (9-x) stimulated worldwide interest in the subject.
We have prepared superconducting thin film of high T sub c YbBa sub 2 Cu sub 3 O sub x by MBE techniques using evaporation of Cu, Yb and BaF sub 2 or Ba.
High quality, superconducting Y sub 1 Ba sub 2 Cu sub 3 O sub (7-x) thin films have been successfully produced by molecular beam epitaxy on MgO(100) at a substrate temperature ~650C.
In this paper, traditional airborne SAR focusing algorithms are extended to the spatial configuration.
This paper deals with a new and very interesting technique by which the properties of silicon surfaces are altered very materially by bombardment with ions of such (/ases as hydrogen, helium, nitro
J. Kruithofs method1 for projecting from measured point-to-point teletraffic data qtJ to some future values ptJ is based upon estimates of total originating and terminating traffic only.
In recent years a large amount of work has been carried out in developing new lead alloys for cable sheathing purposes, and the author gives a list of metallic sheathing materials which have been p
This study describes the properties of LPCVD Al deposited by the disproportionation of AlCl on Si and SiO(2) substrates.
Network fault management is a difficult task due to the lack of accurate definitions for the different types of faults.
