Publications

In this paper we study a discrete Raman laser amplification model given as a Lotka-Volterra system.

Magnetic Raman measurements in a wide range of cuprate materials have manifested the presence of high energy spin fluctuations, with a characteristic energy near 3000 cm sup (-1), corresponding to

Inelastic light scattering, with energy shifts of up to 1 eV, has provided a valuable probe of the spin fluctuation dynamics in the planar cuprates.

For the reliable performance of the GaAs opto-electronic devices on Si, a significant reduction in the amount of residual stress, which develops due to the lattice mismatch and thermal mismatch bet

Lattice dynamics measurements have been performed on a series of periodic and nonperiodic strained-layer GaSb/AlSb lattices using Raman scattering.

Raman spectroscopy has been used to determine built-in deformation in Ge(x)Si(1-x)/Si strained layer superlattices grown by molecular beam epitaxy.

Raman scattering measurements have been performed on a series of periodic and nonperiodic strained-layer GaSb/AlSb lattices.

We report the Raman spectrum of single crystals of Bi sub (2.2) Ca sub (0.8) Sr sub 2 Cu sub 2 O sub (8+delta). The most prominent features are at 120, 295, 462, and 625 cm sup (-1).

Raman scattering measurements of zone-folded acoustic phonons in periodic and quasiperiodic superlattices have been performed and analyzed in order to extract values of the structural parameters.

Raman scattering has been used to study the folded acoustic mode structure associated with GaSb/AlSb strained-layer lattices which exhibit periodic, quasiperiodic, or random sequencing of the indiv