The paper reviews recent advances of Raman fibre laser (RFL) based amplification techniques in long-haul/unrepeatered coherent transmission systems.
Stimulated Raman scattering is a nonlinear optical process that, in a broad variety of materials, enables the generation of optical gain at a frequency that is shifted from that of the incident rad
In this paper we study a discrete Raman laser amplification model given as a Lotka-Volterra system.
Magnetic Raman measurements in a wide range of cuprate materials have manifested the presence of high energy spin fluctuations, with a characteristic energy near 3000 cm sup (-1), corresponding to
Inelastic light scattering, with energy shifts of up to 1 eV, has provided a valuable probe of the spin fluctuation dynamics in the planar cuprates.
For the reliable performance of the GaAs opto-electronic devices on Si, a significant reduction in the amount of residual stress, which develops due to the lattice mismatch and thermal mismatch bet
Lattice dynamics measurements have been performed on a series of periodic and nonperiodic strained-layer GaSb/AlSb lattices using Raman scattering.
Raman spectroscopy has been used to determine built-in deformation in Ge(x)Si(1-x)/Si strained layer superlattices grown by molecular beam epitaxy.
Raman scattering measurements have been performed on a series of periodic and nonperiodic strained-layer GaSb/AlSb lattices.
We report the Raman spectrum of single crystals of Bi sub (2.2) Ca sub (0.8) Sr sub 2 Cu sub 2 O sub (8+delta). The most prominent features are at 120, 295, 462, and 625 cm sup (-1).
