Publications

Processing of the self-aligned GaAs MESFET's involves high temperature annealings for activation of the ion implanted species.

The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford Backscattering (RBS) and x-ray pole figure analysis is improved by a rapid thermal anneal

The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford Backscattering (RBS) is improved by a post deposition thermal treatment which brings the

Rapid, room-temperature photochemical aqueous etching of n- type GaAs is achieved in an HF-acid-based solution.

We demonstrate an integrated hybrid silicon tunable laser with rapid and wide tunability for applications in sensing and optical networks.

Twin roller quenching from the melt at 100 to 200K above the melting point with a quench rate of ~ 10 sup 7 K sec sup -1 was used to prepare pure glass of several high T sub c compositions, includi

An RF photonic scheme capable of performing channel tuning among time slots in ultra-fast OTDM networks at nanosecond reconfiguration speed is described.

We demonstrate a rapidly tunable 10 Gbit/s all-optical wavelength converter based on a semiconductor optical amplifier delay interferometer configuration and a tunable laser.

We demonstrate a rapidly tunable 10 Gbit/s all-optical wavelength converter based on a semiconductor optical amplifier delay interferometer configuration and a tunable laser.

At AT&T Bell Laboratories in Holmdel, New Jersey, a multimedia conferencing system called Rapport is being developed to enhance existing call management capabilities.