Positively and negatively charged silicon cluster ions react exothermically with NO2. The predominant reaction is loss of a single silicon atom in the form of SiO.
The main features of a number of different methods of waveform analysis are enumerated and briefly discussed and an account is given of the principles governing the design of an analyser incorporat
A sputter system utilizing three Kaufman ion sources has been adapted to the fabrication of high-T sub c YBa sub 2 Cu sub 3 O sub (x) thin films.
There has been a growing interest in the application of low pressure plasma environments to III-V etching techniques.
Reactive ion etching of III-V materials with CH sub 4 /H sub 2 mixtures, an interesting alternative to traditional Cl-containing chemistries, shows promise in applications to optoelectronic device
Reactive ion etching of InP with CH sub 4/H sub 2 mixtures, a promising process for optoelectronic device (e.g.
Excitation within the charge-transfer (CT) band of the electron donor-acceptor or EDA complexes of tetranitromethane (TNM) with a series of 9- substituted and 9,10-di-substituted anthracenes (An)
We present a formal model for concurrent systems.
Among the various plasma etching techniques Reactive-Sputter Etching (RSE) offers the highest anisotropy.
The optical recording characteristics of TeNx films are described. Te-nitride formation has been achieved by reactive sputtering.
