Publications

A sputter system utilizing three Kaufman ion sources has been adapted to the fabrication of high-T sub c YBa sub 2 Cu sub 3 O sub (x) thin films.

There has been a growing interest in the application of low pressure plasma environments to III-V etching techniques.

Reactive ion etching of III-V materials with CH sub 4 /H sub 2 mixtures, an interesting alternative to traditional Cl-containing chemistries, shows promise in applications to optoelectronic device

Reactive ion etching of InP with CH sub 4/H sub 2 mixtures, a promising process for optoelectronic device (e.g.

Excitation within the charge-transfer (CT) band of the electron donor-acceptor or EDA complexes of tetranitromethane (TNM) with a series of 9- substituted and 9,10-di-substituted anthracenes (An)

We present a formal model for concurrent systems.

Among the various plasma etching techniques Reactive-Sputter Etching (RSE) offers the highest anisotropy.

The optical recording characteristics of TeNx films are described. Te-nitride formation has been achieved by reactive sputtering.

We have observed that by the reaction of silane with clean Ni, Rh, Pt, Mo, Ta, W, Cu, and Au surfaces at elevated temperatures, thin alloy and intermetallic compound phases can be prepared.

The rates and product distributions of the reactions of naked gas phase silicon clusters with methylsilane have been investigated using Fourier transform ion cyclotron resonance mass spectrometry (