Resonant behavior in the frequency dependent responsivity of a high electron mobility transistor based plasma wave detector from 0.1 to 6 GHz is clearly demonstrated at T=0.3 to 4 K.
The tunneling of carriers in semiconductor heterostructures has recently gained much interest due to its importance as a basic physical phenomenon and its promising device applications.
We report resonant inelastic x-ray measurements of insulating La sub 2 CuO sub 4 and Sr sub 2 Cu O sub 2 Cl sub 2 taken with the incident energy tuned near the Cu K sub (alpha) absorption edge.
We present a quantitative model to calculate the lifetime of quasi-bound states in the Ga sub (1-x) Al sub x As-GaAs-Ga sub (1-x) Al sub x As structure including consideration of GAMMA-X transfers.
Schawlow and Townes 1 have proposed infrared and optical masers using Fabry-Perot interferometers as resonators.
We measured the resonant nonlinear optical response of the intersubband transitions in GaN/AlGaN multiple quantum well structures.
We measured the resonant nonlinear optical response of the intersubband transitions in GaN/AlGaN multiple quantum well structures.
A new scheme for the generation of coherent radiation on the intersubband transition without population inversion between subbands is presented.
Using dc excitation to spatially tilt Landau levels, we study resonant acoustic phonon scattering in two-dimensional electron systems.
This paper describes a theoretical and experimental analysis of narrowband resonant PIN-FET receivers for subcarrier multiple- access-networks.
