Publications

Displaying 30161 - 30170 of 37748

Silicon Photonics: a Scaling Technology for Communications and Interconnects

Silicon photonics exploits CMOS processes to fabricate passive and active photonic circuits on silicon substrates.

Silicon planar transistors and diodes for deep-water submarine cable repeaters

A detailed description is given of the methods used by S.T.C.

Silicon radio integration: architectures and technology: from cartesian zero IF receive & transmit to polar zero I and Q, from silicon bipolar to bulk and SOI CMOS

During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the fu

Silicon RF-Photonic Filter and Down-Converter

An RF-photonic filter and down-converter system based on a compact and fully tunable silicon optical filter has been demonstrated and analyzed.

SILICON RF-PHOTONIC FILTER AND DOWN-CONVERTER

An RF-photonic filter and down-converter system based on a compact and fully tunable silicon optical filter has been demonstrated and analyzed.

Silicon RFIC's for a DCS1800 base station receiver downconverter

This paper describes silicon RFIC's designed for a DCS 1800 base station receiver downconverter.

Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics

Metal-semiconductor (or Schottky) barriers have been studied extensively in the past few years.

Silicon Surface Cleaning by Low Dose Argon-Ion Bombardment for Low-Temperature (750C) Epitaxial Deposition. II. Epitaxial Quality

Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperature (750C) and very low pressures (1x10 sup -2 Torr).

Silicon Tetrachloride as an n-Type Dopant Source in a Multi- Frit Halide Vapor Phase Epitaxial System

A common n-type dopant source in Halide Vapor Phase Epitaxy is Hydrogen Sulfide. This dopant source has been used successfully for GaAs and InP materials.

Silicon trench etch in a hex reactor.

The fabrication of trench structures in single crystal silicon substrates for dielectric isolation or buried capacitors is readily achievable in a hexagonally configured, low pressure plasma etch s