We demonstrate the first silicon photonics enabled hyper-wideband wireless link with an instantaneous bandwidth of 12 GHz, which is 85% of the center frequency of 14 GHz.
We demonstrate the first ultra-wideband RF link enabled by silicon photonics based optical signal proceessing.
Silicon photonics exploits CMOS processes to fabricate passive and active photonic circuits on silicon substrates.
A detailed description is given of the methods used by S.T.C.
During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the fu
An RF-photonic filter and down-converter system based on a compact and fully tunable silicon optical filter has been demonstrated and analyzed.
An RF-photonic filter and down-converter system based on a compact and fully tunable silicon optical filter has been demonstrated and analyzed.
This paper describes silicon RFIC's designed for a DCS 1800 base station receiver downconverter.
Metal-semiconductor (or Schottky) barriers have been studied extensively in the past few years.
Argon-ion bombardment has been optimized as a method to clean silicon substrates prior to epitaxial deposition at low temperature (750C) and very low pressures (1x10 sup -2 Torr).
