Publications

We present an integrated optical device that can switch any of eight wavelengths to any of nine fibers with 7 dB loss.

The silicide reaction in co-deposited TiSix layers on single crystal and pre-amorphized Si has been studied in detail.

Silicide formation in implanted channels and interfacial reactions of Ni, Co, Ti, and Cu contacts under high current density have been investigated.

The formation of disilicides of titanium and tantalum from Ti-Ta alloys codeposited on silicon and polysilicon have been investigated using x-ray diffraction techniques, resistance measurements, an

Rapid thermal chemical vapor deposition (RTCVD) is a file growth technique resulting from the combination of rapid thermal annealing lamps and a chemical vapor deposition chamber.

This paper reviews work on epitaxial heterostructures involving silicon layers and/or silicon substrates.

This paper describes design and simulations of dielectric laser electron accelerators that achieve Gigavolt-per-meter (GV/m) accelerating gradients and wide electron channels (>1 μm).

In this letter, we report on heterostructure bipolar transistors (HBTs) based on silicon carbide (SiC) and a silicon carbide:germanium (SiC:Ge) alloy.

This paper describes silicon RFICs designed for GSM900/DCS1800 base station receivers. GSM standard and radio requirements are reviewed, and circuits that meet those requirements are discussed.

This paper presents a silicon complexity analysis of ML search techniques for MIMO as applied to the HDSPA extension of UMTS.