Publications

Machining or sputtering patterns with micron-sized dimensions, and submicron dimensional control can now be readily accomplished with Focused Ion Beams (FIB).

Secondary ion mass spectrometry (SIMS) has been used to study the development of a new processing technology for the fabrication of AlGaAs/GaAs heterojunction bipolar transistor.

Confidence in a depth profile result requires that several factors be taken into account.

The ability to obtain concentration depth profiles of alkali elements in insulators at sputter rates greater than 1.0 nm/s has been achieved with the use of a neutralizing electron beam and without

SIMUL is a software package to be used in conjunction with the SPANNER software package for the simulation and performance evaluation of protocols.

We have performed simulated annealing of silicon clusters with a Langevin molecular dynamics approach.

Job-burnout has been associated with disturbed sleep, day time fatigue and cognitive weariness.

An operator service position system is being developed which will provide a number of new capabilities including Automatic Speech Recognition (ASR).

The task of simulating systems of colliding rigid disks or billiard balls is considered an important benchmark for parallel event driven simulation schemes.

Performance studies in mobile communications require us to take user mobility as an important stimulus for the systems into account.