Publications

Model parameters have been measured to characterize the exposure and development of Microposit 2400 resist exposed by a new deep UV wafer stepper at 248 nm.

This memorandum discusses the simulation of the isolated npn transistors in AT&T's 1.25micron BiCMOS technology, assuming nominal processing.

We have performed two-dimensional (2D) and three-dimensional (3D) (axisymmetric) numerical simulations of physical vapor deposition into high aspect ratio trenches and vias used for modern very lar

We have performed 2D and 3D (axisymmetric) numerical simulations of physical vapor deposition (PVD) into high aspect ratio trenches and vias used for modern VLSI interconnects.

A new quantum well laser simulator that accounts for details of carrier transport, distribution of two dimensional carriers within the quantum well, optical gain spectra, and photon rate equations,

Velocity overshoot, which is a consequence of high electric field gradients existing in devices with submicron feature size must be accounted for in accurate numerical semiconductor models.

The Dual Electro-absorption Modulated Laser (D-EML) is a transmitter technology based on DFB-laser (Distributed Feed Back) and EA-modulator (Electro-Absorption) integrated on the same chip with dua

The dual electro-absorption modulated laser (D-EML) is a transmitter technology based on distributed feedback laser and electro-absorption modulator integrated on the same chip with dual independen

The nonlinear phase noise in saturated semiconductor optical amplifiers with DPSK modulation is studied by numerical simulation.

Thermal vibration of the atoms in a crystal give rise to a diffuse background in the diffraction pattern (in between the normal allowed Bragg reflections).