MATERIALS SCIENCE Effect of Hydrogen on Amorphous Silicon. J. J. Hauser, Solid State Commun., 19 (1976), pp. 1049-1051.
ELECTRICAL AND ELECTRONIC ENGINEERING Aberrations and Tolerances in a Double-Deflection Electron Beam Scanning System. M. G. R. Thomson, J. Vac. Sci. Technol., 12 (November-December 1975), pp.
Low-Noise GaAs MESFETS. B. S. Hewitt, et al., Electron. Lett., 12, No. 12 (June 10, 1976), pp. 309-310.
Abstracts of Papers by Bell System Authors Published in Other Journals CHEMISTRY Dielectric Anisotropy in Amorphous Ta 2 0 8 Films. P. W. Wyatt, J. Electrochem. Soc., 122 (December 1975), pp.
is negligible, implying that direct emission is responsible for the presence of these compounds. ELECTRONIC AND ELECTRICAL ENGINEERING Frequency-Agile Millimeter-Wave Phase Lock System. P. S.
compared with experimental results for uniformly bulk doped and diffusion doped material.
A Comparison of Chemical Etches for Revealing (100) Silicon Crystal Defects. D. G. Schimmel, J. Electrochem. Soc., 123, No. 5 (May 1976), pp. 734-741.
Algorithm generates optimal object code for a machine with N ^ 1 registers and unlimited memory capacity when the dag is a binary tree.
Contemporary Physics. KARL K . DARROW.
A.I.E.E. Journal, Vol. 45, pp. 109-115, Feb., 1926. A.I.E.E. Journal, Vol. 45, pp. 243-253, Mar., 1926. ^ Astrophysical Journal, Vol. 52, pp. 309-319, Dec., 1925.
