The temporal evolution of the electrically active B fraction has been measured experimentally on B implanted Si, and calculated using atomistic simulation.
Activation energies associated with resistivity anomalies of electrons confined to a two-dimensional potential well in a high magnetic field have recently been reported by Chang et. al.
This paper summarizes an extensive study of the temperature dependence of magneto-transport in the fractional quantum Hall effect in GaAs-Al sub x Ga sub (1-x) As heterostructure devices of varying
It is shown that the activation energies for failure rate calculations can be conveniently estimated using Cox's method --- a distribution- free method widely applied in the medical field.
We present activation gap measurements of the fractional quantum Hall effect (FQHE) in the second Landau level.
803 804 806 807 809 810 810 811 811 Contamination of surfaces by organic vapors is a subtle factor that influences the electrical erosion of relay contacts.
Amporphous silicon films with B, P, and As implants were activated with thermal anneals that include spiking to the maximum temperature.
The diffusivity of Sb in Si is retarded by pressure, characterized at 860C by an activation volume of V*=(+0.03+-0.01) OMEGA, where OMEGA is the atomic volume.
The diffusivity of B in Si is enhanced by pressure, characterized by an activation volume of -0.17 +- 0.01 times the atomic volume OMEGA, which is close to the formation volume of the self-intersti
Both passive and active mode-locking have been demonstrated in single-section quantum dots Fabry-Perot semiconductor lasers without saturable absorber, generating pulses at 28 GHz repetition freque
