We report on a new method for calculating ballistic electron transmission through epitaxial interfaces and its application to a silicon twist boundary.
In recent experiments, van Houten et al. have demonstrated coherent electron in a 2D electron gas.
We report ballistic hole conduction in 2 mu m long GaAs quantum wires of nominal cross-section 15 nm by 15 nm.
Low temperature ballistic hole transport in high-quality pentacene single crystals is studied using macroscopic gated four-terminal van-der-Pauw geometry and two-terminal conventional field-effect
Using Monte-Carlo simulation, we show the ballistic electrons coupled with intervalley scattering produces peaks in the distribution function of electrons in submicron structures.
By measuring the ac impedance, we measure for the first time the crossover from diffusive (omegatau 1) to ballistic (omegatau > 1) transport as a function of frequency (dc to 5 GHz) in a dc con
Ballistic-electron-emission spectroscopy (BEES) is used to measure fluctuations in the thickness of buried Ga0.8Al0.2As layers.
Estimates of the anticipated band alignments for pseudomorphic InP/In sub x Ga sub (1-x) As heterosturctures for growth on (001) InP are presented; wherein = x = 1.0.
The self-consistent "ab initio" pseudopotential results of Van De Walle and Martin have been combined with the phenomenological deformation potential theory of Kleiner and Roth to estimate the band
The technique of Photothermal Deflection Spectroscopy (PDS) has provided the clearest measurement of the absorption edge in polyacetylene.
