Studies of the reaction mechanisms of small clusters provide one possible means of understanding the chemical reactivity of surfaces at the microscopic level.
We have directly observed fluctuating dipolar clusters in the defected paraelectric KTa(0.991)Nb(0.009)O(3) using inelastic light scattering techniques for temperatures between 1.8 and 25K and for
Formation condition and annealing kinetics of self-interstitial (I) clusters in ion implanted Si have been investigated.
Examination of the coverage dependence of the core-electron photoemission intensity and binding energy for simple, noble, and transition metal clusters supported on amorphous carbon reveals three d
We consider the problem of client assignment in a distributed system of content servers.
Clustering is essential to many tasks in pattern recognition and computer vision.
Simulated annealing is a powerful general purpose optimization technique which has been used for several difficult problems in the area of VLSI Design, including the standard cell placement problem
We report ion scattering and TEM investigations of the first layers of GaAs grown on clean Si(111).
Cluster growth experiments of Ga on As terminated Si(111) are reported and shown to simulate Ga-As coevaporation in the case of low Ga and very low As fluxes.
Of the many possible combinations of dopants that may be incorporated into silica, the combination of aluminum and phosphorus is of special interest because of the consequences for processing and i
