The heteroepitaxy of GaAs on foreign substrates is of great interest because of its potential for novel monolithic optoelectronic integrated circuits; e.g., the integration of GaAs optical devices
A globally-adaptive curvilinear coordinate formalism is shown to be easily convertible to a class of curvilinear transformations locally optimized around atom sites by a few parameters.
Virtual reality applications make use of 360-degree panoramic or omnidirectional video with high resolution and high frame rate in order to create the immersive experience to the user.
Omnidirectional MediA Format (OMAF), a recent standard for representation of 360° video content, supports only equirectangular projection (ERP) and cubemap projection (CMP) and their region-wise pa
We compare molecular beam epitaxy growth of high electron mobility AlGaN/GaN heterostructures grown homoepitaxially on semi-insulating (SI) GaN templates prepared by hydride vapor phase epitaxy (HV
Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic
We investigate the possibility of packing 100Gb/s PDM-QPSK channels with 28% overhead into a 33GHz-grid.
We compare the results of thermally induced isochronal and isothermal decays of fiber Bragg gratings written through cw exposure of an unloaded germanosilicate fiber.
By using multiple receiving antennas and spatial or spatio-temporal processing techniques co-channel interference (CCI) may be suppressed.
Many Internet of Things (IoT) applications benefit greatly from low-power long-range connectivity.
