Impressive results have been published for GaN-based transistors for large frequency range.
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band.
This letter presents a high conversion gain double-balanced active frequency doubler operating from 36 to 80 GHz. The circuit was fabricated in a 200 GHz fT and fmax 0.18 μm SiGe BiCMOS process.
A 1.25GS/s 7b single-channel SAR ADC is presented with an SNDR/SFDR of 41.4dB/51dB at low frequencies, while the SNDR/SFDR at Nyquist are 40.1dB/52dB and are still 36.4dB/50.1dB at 5GHz.
a 256K x 1 SRAM has been designed and fabricated using a radiation hard 1.0micron CMOS technology.
This paper proposes a 3D map augmented photo gallery mobile application that allows user to virtually transit from 2D image space to the 3D map space, to expand the field of view to surrounding env
A CMOS limiting amplifier with a bandwidth of 3 GHz, a gain of 32 dB, and a sensitivity of 2.2 mV sub (pp) (@ BER = 10 sup (-12)) consumes 53mW and is fabricated in a standard 2.5 V, 0.25 micron CM
A 125Mbaud receiver for 10/100 fast ethernet has been implemented in a 3V 0.25microns digital CMOS process.
A fully differential master-slave track-and-hold amplifier is designed and fabricated with a 320-GHz-fT-InP DHBT process.
We propose an adaptive fixed code-excited linear prediction (AF-CELP) speech coder operating at 4 kbps.
