Publications

The fabrication and characterization of a new two-section etched- groove laser that uses vapor-phase regrowth is given.

The Advanced Silicon Etch (ASE(TM)) process has been used for silicon substrate etching for the manufacture of SCALPEL(TM) (SCattering using Angular Limitation Projection E-beam Lithography) masks.

Bismuth strontium calcium cuprate superconductors with nominal composition, Bi sub 2 (Sr,Ca) sub 3 Cu sub 2 O sub 8, have been examined by electrochemical techniques and are found to be both hig

Photoelectrochemical etching of InP is used to etch deep (80microns) narrow (20microns) grooves.

We have investigated the regrowth of InP by gas source molecular beam epitaxy on patterned substrates with different V-grooved channels.

It is known that the RCA Standard Clean 1, which is used repeatedly during device fabrication, can cause etching of Si.

The proliferation of advanced portable technology places substantial demands on current patterning techniques to satisfy future device and data needs.

This application allows manufacturers of telecommunication equipment to bring innovative network functionaliy earlier to the market than with the established technologies.

Implementation of 100Mb/s Ethernet in FPGA. First part is description of RMII interface. Then simple receiver and transmitter is provided.

Label space consumption has been studied in label-based forwarding architectures such as multi-protocol label switching (MPLS) to reduce forwarding table sizes and lookup complexity, to simplify ne