We designed two kinds of flip-chip bonded electro-absorption modulated laser on AlN or Si carrier, working at 100 Gb s?1.
This paper presents a study of flip-chip bonding for space applications.
A flip-chip approach for millimetre-wave frequencies up to W band is presented. Key to high return loss at the interconnect is a small bump-pad area.
The structure, technology, mounting, characteristics and reliability of "flip-chip" devices are discussed.
The technique of laser-induced fluorescence line narrowing is used to probe the inhomogeneously broadened sup 2 E-sup 4 A sub 2 transition of Cr sup (3+) in the disordered crystalline material alph
The possibility to perform realistic fault simulations for Silicon-On-Insulator circuits is investigated.
The difference equation Af v Wn = t>kXn-k - J2 dkWn-k , n ^ N (1) k=0 Jfc=l with M ^ N defines the behavior of a general time-invariant discrete filter which acts on an input sequence x0 , xt ,
We consider flood search on a line and show that no algorithm can achieve an average-case competitive ratio of less than 4 when compared to the optimal off-line algorithm.
As Ethernet deployments become larger and the number of active MAC addresses in the network grows, flooding (broadcast based resolution of the location of unknown addresses) becomes a scalability b
WiFi access points (APs) are nowadays ubiquitous in multi-level buildings to provide uninterrupted network access to mobile users.
