A new formant-tracking algorithm using phoneme information is proposed.
From the early 1960's to the present, the Dielectric Isolation (D.I.) technology has been the only commercial process available for producing thick (10-100 micron) Si films on oxidized Si wafers fo
X-ray scattering and electron transmission microscopy of melt- spun AlSiMn alloys reveal that the Al-Mn icosahedral phase itself can grow congruently over a range of composition varying from 16 to
We report here the formation of new quasicrystals of Ga sub (16) Mg sub (32) Zn sub (52) and Al sub (60) Si sub (20) Cr sub (20), and their structure examined with TEM and x-ray diffraction.
An isolated pit and connected pits with one-monolayer depth have characteristic step-edge shapes on a GaAs (110) surface fabricated by a cleaved-edge overgrowth (CEO) method and high temperature gr
A novel p type implantation using a co-implant of phosphorus and beryllium to produce a shallow p sup + surface layer is reported.
The insensitivity of experimentally observed Schottky barrier height (SBH) to the metal work function, a phenomenon known as Fermi level pinning, has traditionally been attributed to the presence o
It is demonstrated that well defined buried layers of Beta SiC can be grown epitaxially within a silicon substrate.
We report N body models for the formation of spheroids of galaxies. The material starts in uniform expansion.
The desorption of hydrogen from alkali promoted surfaces has been studied with Electron Stimulated Desorption (ESD).
