We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs lavers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (11
Inorganic compounds with the AB(2)X(4) spinel structure have been studied for many years, because of their unusual physical properties.
Long-chain alkanethiols, HS(CH sub 2) sub n X, adsorb from solution onto gold surfaces and form oriented, and perhaps ordered, monolayer films.
Two important steps in the fabrication of heterojunction bipolar transistors (HBTs) in the GaAs-AlGaAs system are the formation of P sup + contacts to the base layer, and semi-insulating regions ne
Molecular dynamics simulations have been performed for a model aqueous solution of mucin.
The formation of shallow (0.05-0.2micron) p(+) layers in GaAs by pulse diffusion of Zn from a doped oxide source or by low energy implantation of Cd, Mg, Be or Zn ions was investigated by C-V etch
Oxygen implantation into n sup + AlGaAs, followed by annealing above 600C creates a deep acceptor level which compensates the shallow donors present in the material.
From the early work on high dose oxygen implantation for buried Si02 formation, it is apparent that the temperature (T) of the Si substrate during the implant has a strong influence on the quality
Formation, thermal evolution and annealing kinetics of self-interstitial clusters in ion implanted Si have been investigated.
Formulas on Queues in Burst Processes--II By M. M. SONDHI, B.
