The insensitivity of experimentally observed Schottky barrier height (SBH) to the metal work function, a phenomenon known as Fermi level pinning, has traditionally been attributed to the presence o
It is demonstrated that well defined buried layers of Beta SiC can be grown epitaxially within a silicon substrate.
We report N body models for the formation of spheroids of galaxies. The material starts in uniform expansion.
The desorption of hydrogen from alkali promoted surfaces has been studied with Electron Stimulated Desorption (ESD).
We have characterized, by means of atomic force microscopy, the as-grown and subsequently in situ annealed surfaces of 5 nm GaAs lavers grown by molecular beam epitaxy (MBE) on a vacuum-cleaved (11
Inorganic compounds with the AB(2)X(4) spinel structure have been studied for many years, because of their unusual physical properties.
Long-chain alkanethiols, HS(CH sub 2) sub n X, adsorb from solution onto gold surfaces and form oriented, and perhaps ordered, monolayer films.
Two important steps in the fabrication of heterojunction bipolar transistors (HBTs) in the GaAs-AlGaAs system are the formation of P sup + contacts to the base layer, and semi-insulating regions ne
Molecular dynamics simulations have been performed for a model aqueous solution of mucin.
The formation of shallow (0.05-0.2micron) p(+) layers in GaAs by pulse diffusion of Zn from a doped oxide source or by low energy implantation of Cd, Mg, Be or Zn ions was investigated by C-V etch
