Oxygen implantation into n sup + AlGaAs, followed by annealing above 600C creates a deep acceptor level which compensates the shallow donors present in the material.
From the early work on high dose oxygen implantation for buried Si02 formation, it is apparent that the temperature (T) of the Si substrate during the implant has a strong influence on the quality
Formation, thermal evolution and annealing kinetics of self-interstitial clusters in ion implanted Si have been investigated.
Formulas on Queues in Burst Processes--II By M. M. SONDHI, B.
A convenient framework for an unified analysis of a variety of digital communication systems involving buffering-some are discussed later-is provided by the system in Fig. 1.
Using the Peierls-Nabarro model for describing the equilibrium of an interfacial shear force existing between two elastically isotropic media, van der Merwe first formulated the elegant misfit disl
We report results from an investigation of 40 years of solar radio burst data, from 1960-1999, compiled by the National Geophysical Data Center at NOAA, Boulder, CO.
M O D E R N industry is characterized by the extent to which scientific research and technique based on precise study have contributed to its progress.
This paper presents the performance results of a 1xEV-DO system. With different fading channels, data rate control lengths and overhead channel power levels, the system performance will vary.
We study long-haul coherent optical transmissions suffering from polarization dependent loss (PDL).
