The epitaxial growth of GaN on Si (1 1 1) substrates has been performed using plasma-assisted molecular beam epitaxy with a thin (similar to 19.3 nm) single-crystal layer of Sc2O3 as a template/buf
This paper presents the development of power MMICs in GaN HEMT technology for X-Band T/R modules.
GaN-based devices are currently developed in close collaboration with end-users. 10 years have been necessary to arrive at the edge of this development cycle.
We review two recent developments in the field of quantum cascade lasers.
Discrete GaN/AlGaN heterojunction bipolar transistors (HBTs) were fabricated on material grown by both metal organic chemical vapor deposition and molecular beam epitaxy.
We report an analysis of completeness and suitability of OpenConfig, OpenROADM and OpenDevice models, for physical-impairment aware network planning, and a proof-of-concept in a partially disaggreg
Good surface morphology and layer uniformity of LPE-grown films are favored by fast melt removal after growth.
Containerless fabrication of fluoride glass rods using the gas film levitation technique has been developed to overcome some of the present limitations in the classical preparation by melt routes,
Four commercial samples of tungsten hexafluoride were analyzed for purity by Fourier transform mass spectrometry.
Gas phase ion/molecule reactions have been used to probe the structure of ions obtained by electron impact upon 1-(diphenylmethylene)cycl opropane and 2,2-diphenyl-1-methylenecyclopropane.
