Compressive and tensile strained GaInAsP layers as well as zero-net strain multiple quantum wells, grown by gas source molecular beam epitaxy, have been investigated.
The use of P(2) and As(2) beams generated by several different beam sources for the growth of InP, GaAs and Ga(x)In(1-x)P (y)As(1-y) has been investigated.
During the past year, the work on the use of Gas Source Molecular Beam Epitaxy (GSMBE) for the growth of GaInAs(P)/InP heterostructures has extended to the detailed study of a variety of heterostr
This paper is a review of gas source molecular beam epitaxy for a review paper in a special issue of Progress in Crystal Growth & Characterization, devoted to aspects of epitaxy.
It is shown experimentally and theoretically that axial gas flow leads to controlled unidirectional operation of a CO2 ring laser.
The reaction TiCl sub 4 with three families of copolymers differing in their hydrophilicity and acidity was investigated after equilibration of the polymers at 30% RH.
The structures and energetic involved in the nitrosation of benzene are explained by means of ab initio molecular orbital computations.
The electronic properties of compensated InP crystals can be used to sensitively monitor gas-surface interactions.
We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy.
The gaseous neurotransmitters nitric oxide (NO) and carbon monoxide (CO) are prominent and universal components of the array of neurotransmitters found in olfactory information processing systems.
