Publications

Silicon tetrafluoride, SiF(4), of high purity with respect to either hydrogen- or oxygen-containing species is required by the optical waveguide telecommunications and photovoltaic industries, res

Amorphous Si has been formed from the melt by the UV laser heating of surface layers of single crystal (111) Si.

The results of transport measurements on p-type CuInSe2 single crystals in the temperature range of 20 to 300 K are presented and explained assuming the existence of an impurity band.

Using several deriatives of scanning force microscopy with conducting tips, we find direct evidence for impurity band conduction in GaN films near the sapphire substrate interface.

The platinum-impurity diffusion in icosahedral Al(86)Mn(14) produced by melt-spinning has been measured for the first time.

Using a two-photon laser scanning microscope, the spectral and intensity variations of photoluminescence (PL) in a lateral epitaxial overgrown GaN film were mapped with submicron resolution.

Impurity effects on charge ordering (CO) as well as magnetic ground states in perovskite-type manganites are investigated.

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We have observed an amorphous to polycrystalline silicon transformation with concomitant In redistribution in In implanted silicon at temperatures well below those at which solid phase epitaxial g

The dual implantation method developed for defect engineering [O.W. Holland et al, J. Electron.