Publications

Novel monolithic optical receivers in 0.8-mum standard MOS technology with non-return-to-zero data rates in excess of 531 Mbit/s at 850 nm are introduced.

In recent developments in SEM instrumentation and theoretical understanding low voltage (~1KeV) SEM technique (LVSEM) is increasingly becoming a powerful tool to image dopant profiles in semiconduc

We present experimental investigations and develop a strategy to control mode-locking-instabilities of an edge emitting two-section monolithic tapered quantum-dot laser.

Microluminescence (ML) technique has been used to investigate photon and photocarrier diffusion in a nominally undoped InGaAs bulk layer lattice matched to InP grown by Vapor Leviation Epitaxy (VLE

Waveguides engraved in InP by dry etching, reactive ion etching and inductively coupled plasma (ICP), were studied by cathodoluminescence.

We have used multi-longitudinal mode lasers to investigate the ploarization properties of long lengths of single mode fiber cable.

This paper compares three candidate large-scale propagation path loss models for use over the entire microwave and millimeter-wave (mmWave) radio spectrum: the alpha-beta-gamma (ABG) model, the clo

The Electromagnetic Interference (EMI) from multi-layer Printed Wiring Board (PWB) was investigated by Finite-Difference Time-Domain (FDTD) modeling.

In this paper, we investigate several types of nonlinearities used for the unique identification of receiving room impulse responses in stereo acoustic echo cancellation.

We have investigated the growth of Ga-polarity (0001) and N- polarity (000?1) Si-doped GaN on c-plane sapphire substrates by plasma-assisted Molecular Beam Epitaxy (MBE).