Deep level transient spectroscopy has been employed in a study of impurity - interstitial defect reactions in silicon following room temperature electron irradiation.
Intersubband optical absorption at h ~ 2.1 um wavelength in doped 17.5 Å wide GaN quantum wells (QWs) with 51 Å wide intermediate AlN barriers is reported.
Intersubband optical absorption around 1.55 mum has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular-beam epitaxy.
Intersubband optical absorption at lambdasimilar to2.1 mum wavelength in doped 17.5 Angstrom wide GaN quantum wells (QWs) with 51 Angstrom wide intermediate AlN barriers is reported.
Intersubband optical absorption around 1.55microns has been measured in GaN/AlGaN multiple quantum wells (MQWs) grown by molecular beam epitaxy.
Intersubband optical absorption at lambda ~ 2.1 mum wavelength in doped 17.5 Angstrom GaN quantum wells (QWs) with 51 Angstrom wide intermediate AIN barriers is reported.
Intersubband absorption in coupled GaN/AlGaN double quantum wells (DQWs) has been measured.
Intersubband optical absorption in narrow, 15-30 Angstrom wide, GaN/AlGaN quantum wells has been measured.
A new technique is reported which allows the observation of intersubband spontaneous emission in unipolar quantum cascade lasers above threshold.
It is shown that semiconductor lasers utilizing intersubband transitions in quantum boxes, so-called intersubband quantum-hox (IQB) lasers,can have significantly lower threshold current densities a
