Publications

Successful epitaxial growth depends on careful control of the original interface and characterization of the grown overlayer.

We have examined the redox behavior of anodically-formed nickel hexacyanoferrate complexes on electrode surfaces.

We have explored the effects of MeV ion irradiation on the electrical and structural properties of high quality, oriented thin films of YBa sub 2 Cu sub 3 O sub (7-delta).

Thin amorphous silicon layers can be produced in crystalline silicon substrates by ion-implantation.

We have explored the effects of ion beam irradiation on the electrical and structural properties of superconducting thin films of YBa sub 2 Cu sub 3 0 sub (7-delta).

Segregation and diffusion of impurities in amorphous Si during furnace and ion-beam-induced epitaxy will be discussed.

We have studied the temperature- dependent resistivity and Hall coefficient of epitaxial YBa sub 2 Cu sub 3 0 sub (7-delta) films as a function of ion-beam-induced damage.

We have studied the temperature-dependent resistivity and Hall coefficient of epitaxial YBa sub 2 Cu sub 3 O sub 7- sigma films as a function of ion-beam-induced damage.

We have studied the temperature-dependent resistivity and Hall coefficient of epitaxial YBa sub 2 Cu sub 3 O sub 7-delta films as a function of ion-beam-induced damage.

The suitability of MBE-grown GaAs layers on Si substrates has been studied for ion-implanted GaAs MESFET technology.