The suitability of MBE-grown GaAs layers on Si substrates has been studied for ion-implanted GaAs MESFET technology.
We present our computer models of the ion-molecule chemistry of dense interstellar clouds modified and updated to reflect recent laboratory and theoretical information on the rate coefficients of i
An investigation of the ion/molecule of SiF4, examined by Fourier Transform Mass Spectrometry, is reported to provide a basis for analysis of its impurities.
Future generations of Si electronic devices will need very shallow p-n junctions, in the tens of nanometer range.
A special campaign was conducted at the Sondre Stromfjord incoherent scatter radar facility in October 1985 to study hydromagnetic and atmospheric gravity wave phenomena in the cusp region of the m
A special campaign was conducted at the Sondre Stromfjord incoherent scatter radar facility in October 1985 to study hydromagnetic and atmospheric gravity wave phenomena near the cusp regions of th
IoT is poised to revolutionize industries and ways we live and work. These things will digitally connect to other devices and the network via multiple technologies.
The Internet of Things (IoT) consists of interconnected physical devices and software components. These connected things or objects exchange information in order to provide an end-user service.
In LTE system, the interference over thermal noise (IoT) level control is crucial to system performance especially for the cell edge users.
With Machine-to-Machine and Internet of Things getting beyond hype, including an ever wider range of connected device types in ever more value-added services, a new era of data (and multimedia) str
