With an increase in the use of polymers as dielectrics in multilevel VLSI structures, adhesion of the deposited metal layer to the underlying polymer film is becoming a matter of practical importan
The use of focused ion beam (FIB) instruments for device modification and specimen preparation has become a mainstay in the microelectronics industry and in thin film characterization.
We report the emission of ions from single crystal surfaces due to the scattering of hyperthermal Xe over the energy range 6 E sub i (eV) 20.
A two-dimensional method has been developed for calculating ion implantation profiles, based on numerical solution of the Boltzmann transport equation.
Recent advances in the understanding of the relationship between implanted dopant solubility and electrical activity in GaAs are reviewed and direct lattice configuration measurements explaining th
Ion implantation of Si and Se donors in In0.53Ga0.47(As) is reported. Both room temperature and elevated temperature (200 C) implants are performed.
This memorandum will be published in the second edition of the book VLSI Technology, edited by S. M. Sze.
Organic ambipolar semiconductors, which have the ability to efficiently transport both holes and electrons, are of great interest for many useful optoelectronic devices, such as light emitting diod
Upper limit estimates of the permeability of sodium through silicone and polyimide films (obtained by radiotracer techniques) and of the rate of copper ion motion in polyimide films (from current m
The use of MeV ion scattering for surface and interface analysis is described. Four main sections describe: 1) The origin of the surface sensitivity in high energy ion scattering.
