Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface.
In certain applications geometric constraints may make it impractical to use a straight thermosyphon.
GaAs growth experiments have been performed with triethylarsenic (TEAs) to investigate its potential as a replacement for arsine, and to compare the effects on film properties of substituting ethyl
ABSTRACT GaAs growth experiments have been performed with triethylarsenic (TEAs) to investigate its potential as a replacement for arsine, and to compare the effects on film properties of substitut
Failures after curing of aluminum triple track test vehicles with polyimide or RTV overcoats were analyzed.
This work aims to characterize the performance of a commercially available solid heat sink (SHS) and a vapour chamber heat sink (VCHS) with a small localized heat source.
We have investigated ZnO epilayers grown under various Zn/O ratios by plasma-assisted molecular-beam epitaxy.
We demonstrate an active stabilisation technique of a DPSK demodulator at 10 Gb/s with temperature and laser wavelength drift compensation.
As being a promising technique to allow the coexistence of independent wireless sub-systems and to improve the spectral efficiency, Decentralized Dynamic Spectrum Allocation (DDSA) within a Cogniti
In the perspective of smooth capacity upgrades of legacy systems, we experimentally investigate the performance of one 100-Gb/s coherent polarization-division-multiplexed quaternary-phase-shift-key
