The main failure mode of electrostatic actuated RF MEMS, the stiction of the bridge due to dielectric charging, is investigated using an appropriate methodology based on the MEMS microwave performa
We report on an InP/InGaAs DHBT technology, allowing high-speed operation with F sub t = 150 GHz, F sub max = 200 GHz at current densities of I sub c = 110 kA/cm sup 2, while maintaining BV sub ceo
We have used photothermal deflection spectroscopy to examine optical absorption in amorphous silicon films using a variety of surface passivation techniques.
We investigated the performance of symmetrical 40 Gbps TDM-PON using only 10 G class optics by means of DSP equalization.
In this study, we have used mass spectrometry to investigate the efficiency of activated carbon as a scrubbing agent for removal of organometallic tellurium compounds from a vapor stream.
Diodes have existed for approximately 80 years. In the past, diodes consisted of vacuum tubes.
Elastic and inelastic neutron scattering studies were performed on the amorphous alloy (Fe77Cr23)75P16B6A13.
Dark current is a drastic specification for any kind of sensor and particularly for imagers dedicated to low light level. We propose here a method for optimizing the InGaAs photodiode properties.
We report line width measurements of a quantum cascade distributed feedback laser by a heterodyne experiment.
The accuracy of an implementation of the spectrogram technique based on an electroabsorption modulator providing a 30 ps gate is investigated.
