: We discuss the generation, transmission, and coherent detection of 112-Gb/s polarizationdivision multiplexed, 16-ary quadrature-amplitude-modulation (16-QAM) signals at a line rate of 14 Gbaud.
Ion implantation damage has been used as a mask for patterning III-V semiconductors by photoelectrochemical etching.
The systematics of ion beam induced intermixing of WSi sub (0.45) on GaAs have been studied after through-implantation of Si or O in the dose range 10 sup (13) - 5 x 10 sup (16) cm sup (-2).
A new technique using ion beams to produce patterned thin films of the high temperature perovskite superconductor YBa sub 2 Cu sub 3 O sub (7-x) from spin-on metallo-organic precursors is described
The formation of amorphous Si by ion implantation is an important aspect of the science and technology of integrated circuit processing.
A uniform, strained epitaxial film (>10angstroms) is not in thermodynamic equilibrium. rather cluster formation is expected.
Silicon on insulator structures have been successfully formed by the implantation of high doses (>10 18 cm-2) of O+ or N+ ions to synthesise buried layers of oxide or nitride.
New experiments are reported which explore the possibility of using ion implantation to form thin (2000Angstroms) buried layers of stoichiometric SiO(2) in single crystal silicon.
Successive ion beam milling at grazing angles of a 2400 angstrom - thick c-axis oriented YBa sub 2 Cu sub 3O sub 7 film is shown to give smooth films which superconduct at thicknesses on the order
The recent discovery of ion tracks in interplanetary dust and the increasing evidence for carbon and carbunized materials in these objects are strongly suggestive that chemical processing by energe
