The many-body wave function of localized states in one dimension is probed by measuring the tunneling conductance between two parallel wires, fabricated in a GaAs/AlGaAs heterostructure.
We consider a simple model of a random chain at an interface between two fluids, and suppose that its monomers have random affinities with both fluids (e.g.
Single-electron capacitance spectroscopy precisely measures the energies required to add individual electrons to a quantum dot.
This work reports recent improvements in structural characterization by high resolution x-ray diffraction (HRXRD) performed on multiple quantum well (MQW) heterostructures grown on InP substrates.
We have measured the homogeneous linewidth gamma(h) and the diffusion constant D of resonantly excited excitons confined to GaAs layers 50 to 200A wide.
Multi-hop wireless networks using directional antennas are increasingly deployed for various applications such as wireless backhaul.
We have investigated the localized corrosion of sputter-deposited aluminum and Al-0.5% Cu thin film metallizations in dilute HF solutions and the inhibition of this corrosion by CO sub 2 bubbled th
It has been observed in the device development laboratories (5216 and 5211) that aluminum metallizations on integrated circuits are sometimes pitted at their edges after etching in ethylene-glycol/
In Part I, we reported the conditions under which aluminum metallizations on integrated circuits are susceptible to pitting corrosion at their edges following etching in ethylene-glycol/hydrofluori
Convergent beam electron diffraction (CBED) was used to measure localized lattice strains in damascene copper interconnects.
