Low microwave noise performance of AlGaN/GaN HEMTs fabricated on MOCVD epitaxial structures grown on composite substrates (SiCopSiC) is reported.
We demonstrate a back-illuminated planar AllnAs APD.
We demonstrate a planar junction AlInAs APD using Carbon as p-doping impurity of the charge layer allowing to achieve simultaneously a high primary sensitivity of 0.9 A/W, a low dark current (Idark
We demonstrate a low-noise Ga0.47In0.53As photoconductive detector prepared by liquid phase epitaxy using Fe compensation.
The design and test results of a single chip NMOS AGC amplifier are described. The amplifier has a maximum flat gain of 50 dB and a noise figure of 11 dB.
We report on a systematic investigation of the effect of external optical feedback on 17 GHz passively mode-locked two-section lasers based on InAs/InP quantum dashes emitting at 1.58 mu m.
In microwave radio relay systems the receiver thermal noise is one of the main contributors to the total noise of the radio line which is one of the fundamental limitations on many important system
Low noise figures of 3.3-3.9dB have been acheived in flat gain L-band EDFAs over 30nm with 1dB gain variation.
The aim of this paper is to study the performance of an ac/dc converter with low output voltage and low input current harmonic content.
An MOS transistor with zero drain to source voltage is analysed as a filter element.
