The growth of the wide gap II-VI semiconductors ZnSe and ZnS by Organometallic Vapor Phase Epitaxy (OMVPE) has been hindered by the lack of high quality source materials, especially for the group V
The growth of the wide gap II-VI semiconductors ZnSe and ZnS by Organometallic Vapor Phase Epitaxy (OMVPE) has been hindered by the high growth temperatures (typically in the range of 500C) necessa
We report heat capacity measurements for sup 3 He adsorbed on silver powder for temperatures between 0.5 and 7 mK.
KTP possesses superior properties as a phase matched nonlinear optic material.
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250C, using a new tellurium source, dimethylditelluride.
Recent photon echo measurements of low temperature optical dephasing of Nd(3+) in SiO2 glass fibers are reviewed.
A detailed description is presented of phonton echo experiments in Nd(3+ doped silica optical fibers at temperatures below 1K.
Specific heat measurements on Na0.5CoO2 show that the transitions observed at 87 and 53 K in the resistivity and magnetic susceptibility are accompanied by changes in entropy, whereas the one near
InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ~300angstroms.
For the two-impurity Kondo system, the low-temperature properties -- impurity spin-spin correlation function, susceptibilities, specific heat, and Wilson ratio -- are strongly nonuniversal function
