Publications

An optical electroabsorption waveguide modulator is described based on the quantum confined Stark effect in an InGaAs/InP multiple quantum well (MQW) waveguide.

Double heterostructure planer waveguides with InGaAs/InP multiple quantum well (MQW) core and InP cladding layers were grown by atmospheric pressure MOCVD.

We have developed an optical integrated circuit waveguide technology based on conventional Si processing.

A 9-channel grating single-mode wavelength-division multiplexing scheme is demonstrated at 1.5micron with the lowest insertion loss reported to date.

Many practical integrated optical LiNbO(3) devices, such as NxN switch arrays, operate on TM polarized light in Z-cut crystals to utilize the largest electro-optic coefficient, r(33).

We present an ultra broad band wavelength selective switch with 15 THz of bandwidth and less the 4dB insertion loss.

The low magnetic field phase diagram of the high-T sub c superconductor YBa sub 2 Cu sub 3 O sub (9-delta) with delta~2.1 has been determined in fields to 5000 0e.

Using simulated annealing, networks have been found with mean internodal distances lower than any previously reported for a given number of nodes N with a maximum of p outgoing links per node.

Low microwave noise performance of AlGaN/GaN HEMTs fabricated on MOCVD epitaxial structures grown on composite substrates (SiCopSiC) is reported.

We demonstrate a back-illuminated planar AllnAs APD.