We report germanium epitaxial growth using standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) at 200°C.
Silicon MOS devices show significantly improved performance when operated at 77K while high-T sub c superconductors may allow very high performance and high density transmission lines.
We will report and review several dielectric compositions with low sintering temperatures, high dielectric constants and low temperature coefficients.
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
The charge transport in high-mobility polycrystalline pentacene field-effect transistors is investigated in the temperature range from 1.7 to 40 K for carrier concentrations ranging form 10 sup (11
InP-based Fabry-Perot quantum dashes-in-a-well lasers were characterized in terms of noise performances, relative intensity noise and ageing profiles.
We demonstrate experimentally low-timing-jitter all-optical clock recovery for 40-Gb/s NRZ-DPSK signals using a mode-locked quantum-dot Fabry-Perot laser.
We have investigated methyl, ethyl and butyl-based organoarsenic compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs.
This letter describes the combined use of a form of near field photolithography based on conformable phase masks, microcontact printing and shadow masking for low cost fabrication of organic transi
