We show that long wave short wave resonance can be achieved in a second-order nonlinear negative refractive index medium when the short wave lies on the negative index branch.
We report the first long wavelength photoconductive detectors fabricated from GaSb epitaxially grown on a Si substrate. Responsivities of 0.18 A/W are obtained at a wavelength of 1.5microns.
System aspects of ultra low loss fluoride fibers, such as optical nonlinearities, dispersion characteristics, and source and detector capabilities, were analyzed to determine the ultimate performan
An empirical model has been developed that relates the long wavelength LED bandwidth of 62.5/125 micrometer cables to 1. 3 micrometer laser bandwidth and LED spectral characteristics.
An impressive technology now exists for the fabrication of photodetectors based on InGaAsP/InP heteroepitaxy.
We report the realization of the first semiconductor injection lasers based on intraband transitions with emission wavelengths extending beyond the atmospheric windows.
We report the realization of the first semiconductor injection lasers based on intraband transitions with emission wavelengths extending beyond the atmospheric windows.
Presents a novel VCSEL design which is monolithic, planar and combines the advantages of AlAs/GaAs DBRs and InP based active layers.
In this Letter we report on lateral diffusion measurements of excitons at low temperature in double quantum wells of various widths.
While short-range planners of AT&T switch deployment make extensive use of site-specific data and detailed engineering simulation, long-range planners often use approximate, easy-to-use formula
