We will report and review several dielectric compositions with low sintering temperatures, high dielectric constants and low temperature coefficients.
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
Recent developments in the organometallic growth of II-VI compounds such as photolysis assisted growth and the interdiffused multilayer process (IMP) have shown the feasibility of high quality grow
The charge transport in high-mobility polycrystalline pentacene field-effect transistors is investigated in the temperature range from 1.7 to 40 K for carrier concentrations ranging form 10 sup (11
InP-based Fabry-Perot quantum dashes-in-a-well lasers were characterized in terms of noise performances, relative intensity noise and ageing profiles.
We demonstrate experimentally low-timing-jitter all-optical clock recovery for 40-Gb/s NRZ-DPSK signals using a mode-locked quantum-dot Fabry-Perot laser.
We have investigated methyl, ethyl and butyl-based organoarsenic compounds as alternatives to arsine in the metalorganic vapor phase epitaxy (MOVPE) of GaAs.
This letter describes the combined use of a form of near field photolithography based on conformable phase masks, microcontact printing and shadow masking for low cost fabrication of organic transi
The talk will review the physical phenomenon and application of enhanced gate current injection by use of substrate bias.
A high speed, low drive voltage InGa AsP/InP phase modulator with a multiple quantum well waveguide and coplanar travelling wave electrodes has been developed.
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