The talk will review the physical phenomenon and application of enhanced gate current injection by use of substrate bias.
A high speed, low drive voltage InGa AsP/InP phase modulator with a multiple quantum well waveguide and coplanar travelling wave electrodes has been developed.
We report GaAs/AlGaAs quantum well waveguide phase modulators with high phase shift coefficients, as large as 520 degrees per Volt-mm.
Silicon photonics may be a compact integration platform to implement power-efficient and high-bandwidth optical transceivers/transponders.
Surface-normal electroabsorption modulators (SNEAMs) are appealing for short-reach communication systems because of their outstanding properties, such as ultrawide bandwidth and polarization-insens
Sub-0.1microns technologies require gate oxide thicknesses t sub (ox) 3nm and high substrate doping (N aub A > 10 sup (18) cm sup (-3).
In 2005, Griffin showed that an InP phase-shift-keying/duobinary Mach-Zehnder interferometer (MZI) modulator could achieve good transmission performance at 10 Gb/s, despite modest residual amplitud
Today, in the face of ever increasing communication traffic, minimizing power consumption in data communication systems has become a challenge.
We experimentally demonstrate a new concept of low-chirp push-pull silicon microring modulator at 10 Gb/s.
A simplified equalization method based on the band structure of the frequency domain channel matrix is proposed for the single carrier systems employing cyclic prefix (SC-CP) over time-varying wire
