We report heat capacity measurements for sup 3 He adsorbed on silver powder for temperatures between 0.5 and 7 mK.
KTP possesses superior properties as a phase matched nonlinear optic material.
The growth of CdTe by organometallic vapor phase epitaxy has been accomplished at 250C, using a new tellurium source, dimethylditelluride.
Recent photon echo measurements of low temperature optical dephasing of Nd(3+) in SiO2 glass fibers are reviewed.
A detailed description is presented of phonton echo experiments in Nd(3+ doped silica optical fibers at temperatures below 1K.
Specific heat measurements on Na0.5CoO2 show that the transitions observed at 87 and 53 K in the resistivity and magnetic susceptibility are accompanied by changes in entropy, whereas the one near
InGaAs/InP quantum well layers grown by gas source molecular beam epitaxy have been used to fabricate quantum wires and boxes with transverse dimensions as small as ~300angstroms.
For the two-impurity Kondo system, the low-temperature properties -- impurity spin-spin correlation function, susceptibilities, specific heat, and Wilson ratio -- are strongly nonuniversal function
We report germanium epitaxial growth using standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) at 200°C.
Silicon MOS devices show significantly improved performance when operated at 77K while high-T sub c superconductors may allow very high performance and high density transmission lines.
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