Publications

This paper presents a review of recent experimental work near the metal-insulator transition in phosphorus doped silicon (Si:P).

Low temperature photo-induced far-infrared and microwave absorption studies of mixed type I-type II GaAs/AlAs multiple quantum wells have revealed features related to a metal-insulator transition.

Optical particle trapping and separation are essential techniques in the fields of biology and chemistry.

We have demonstrated quantitative carrier profile analysis of InP and Silicon using the newly invented Metal-Insulator-Semiconductor Tunneling Microscope (MISTM).

This is the written version of a lecture to be given at the NATO Advanced Study Institute on Molten Salt Chemistry, Camerino, Italy, August 4-15, 1986.

Al is widely used for metallization of VLSI devices.

Rapid thermal processing has been utilized for shallow diffusions from ZnF(2)/SiO(2'), ZnF(2)/Al(2)O(3'), or CdF(2)/SiO(2) structures to increase the effective barrier height of Au- (100) n-InP Sch

We present grazing incidence FTIR data of Au, Al, and Ti vapor-deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols.

We present grazing incidence FTIR data of Au, Al, and Ti vapor- deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols.

T HE metal lens antennas described by the writer elsewhere 1 comprised rows of conducting plates which acted as wave guides; a focussing effect was achieved by virtue of the higher phase velocity o