We present grazing incidence FTIR data of Au, Al, and Ti vapor- deposited onto self-assembled monolayers (SAMs) of conjugated mono- and dithiols.
T HE metal lens antennas described by the writer elsewhere 1 comprised rows of conducting plates which acted as wave guides; a focussing effect was achieved by virtue of the higher phase velocity o
TN the development of electrical communication, metals and alloys have played a noteworthy part.
A novel method for the design and fabrication of low-cost filtering devices for cellular applications is presented in this paper.
We have found and investigated a metallurgical reaction that occurs between the aluminum and the contact polysilicon in fine-line NMOS devices made using the poly-plug contact process.
One of the primary concerns in the manufacture of advanced microelectronic devices is to ensure that metallic contacts and interconnects do not fall by electromigration or stress-induced voiding.
The metalorganic chemical vapor deposition (MOCVD) materials technology is a vapor-phase growth process that is becoming widely used in the study of the basic physics of novel materials as well as
In this work, MgxZn1-xO (0 = x = 0.33) thin films are epitaxially grown on (0112)r-sapphire substrates by metalorganic chemical vapor deposition.
High quality epitaxial MgxZn1-xO films are essential for the fabrication of ZnO/MgxZn1-xO heterostructures.
Metalorganic chemical vapor deposition is a process that employs two or more metalorganic chemicals (e.g., trimethylgallium, (CH(3))(3) Ga) or one or more metalorganic source and one or more hydrid
