TN the development of electrical communication, metals and alloys have played a noteworthy part.
A novel method for the design and fabrication of low-cost filtering devices for cellular applications is presented in this paper.
We have found and investigated a metallurgical reaction that occurs between the aluminum and the contact polysilicon in fine-line NMOS devices made using the poly-plug contact process.
One of the primary concerns in the manufacture of advanced microelectronic devices is to ensure that metallic contacts and interconnects do not fall by electromigration or stress-induced voiding.
The metalorganic chemical vapor deposition (MOCVD) materials technology is a vapor-phase growth process that is becoming widely used in the study of the basic physics of novel materials as well as
In this work, MgxZn1-xO (0 = x = 0.33) thin films are epitaxially grown on (0112)r-sapphire substrates by metalorganic chemical vapor deposition.
High quality epitaxial MgxZn1-xO films are essential for the fabrication of ZnO/MgxZn1-xO heterostructures.
Metalorganic chemical vapor deposition is a process that employs two or more metalorganic chemicals (e.g., trimethylgallium, (CH(3))(3) Ga) or one or more metalorganic source and one or more hydrid
The consumption of major metals by Western economies appears to have begun a decline in the mid 1970's which has gone largely unnoticed or explained.
The consumption of major metals by Western economies appears to have begun a decline in the mid 1970s which has gone largely unnoticed or explained.
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