Layered structures on an atomic scale have resulted in artificially structured materials having electrical and optical properties which do not exist in nature.
Single crystal type B CoSi sub 2 thin layers have been grown on Si(111) by co-deposition at room temperature.
High quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.
GaN/Al sub 0.15 Ga sub 0.85 N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.
High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates.
GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.
High-quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.
We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy (MBE).
The use of molecular beam epitaxy (MBE) as a tool for monolayer engineering of semiconductor materials, has led to numerous attempts to apply MBE-like techniques to the in situ synthesis of the rec
The simple cubic perovskite (Rb,Ba)BiO sub 3 can be grown at temperatures below 350C by molecular beam epitaxy using an RF plasma atomic oxygen source.
