Publications

High quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.

GaN/Al sub 0.15 Ga sub 0.85 N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.

High quality GaN/AlGaN multiple quantum wells were grown by molecular beam epitaxy on (0001) sapphire substrates.

GaN/Al0.15Ga0.85N multiple quantum wells (MQWs) have been grown by plasma-assisted molecular beam epitaxy on R-plane (10 12) sapphire substrates.

High-quality superlattice structures of GaN/AlGaN were grown on (0001) sapphire substrates by molecular beam epitaxy.

We report for the first time the growth of GaSb/AlSb multilayers and alloys on Si(100) by molecular beam epitaxy (MBE).

The use of molecular beam epitaxy (MBE) as a tool for monolayer engineering of semiconductor materials, has led to numerous attempts to apply MBE-like techniques to the in situ synthesis of the rec

The simple cubic perovskite (Rb,Ba)BiO sub 3 can be grown at temperatures below 350C by molecular beam epitaxy using an RF plasma atomic oxygen source.

Gold pads with similar to 100 nm diameter are imprinted on self-assembled monolayers of alkane dithiols of different lengths using nanotransfer printing.

The role of molecular defects in determining the structure, crystallization, morphology, and properties of electroactive polymers will be described with particular emphasis on ferroelectric poly(vi