Publications

Molecular beam epitaxial growth of InAsSb lattice-matched to GaSb is summarized in this report. High quality InAsSb is obtained with optimal flux ratios and stable substrate temperature.

The first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2 and mixed crystals of chalcopyrite ZnGeAs sub 2 and Ge is reported.

We have succeeded in growing epitaxial layers and multilayer heterostructures of In(1-x)Ga(x)As(1-y)Sb(y) quarternary and InAs0.92Sb0.08 ternary alloys lattice-matched to GaSb by molecular beam epi

Molecular beam epitaxial growth of In(x)Ga(1-x)As(y)Sb(1-y) lattice- matched to (100) GaSb substrate with x up to 0.26 is reported.

We report the first molecular beam epitaxial growth of the II-V semiconducting compound Zn sub 3 As sub 2.

Molecular Beam Epitaxy (MBE) is a thin film crystal growth technique by a process involving the reaction of one or more thermal molecular beams with a crystalline substrate surface under ultra-high

No abstract provided refer to folder released on 101985

This memo reviews the preparation of III-V compound semiconductors by molecular beam epitaxy (MBE).

Layered structures on an atomic scale have resulted in artificially structured materials having electrical and optical properties which do not exist in nature.

Single crystal type B CoSi sub 2 thin layers have been grown on Si(111) by co-deposition at room temperature.